貼片鉭電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)在(zai)額(e)外電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)運(yun)行(xing)時(shi)，有(you)一個167千伏(fu)/毫(hao)米電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)的(de)(de)電(dian)(dian)(dian)(dian)(dian)場。因此(ci)一定要(yao)保(bao)(bao)證整個電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)終真(zhen)個電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)決不會(hui)超(chao)越(yue)劃定的(de)(de)浪涌電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)評級。作(zuo)為(wei)鉭電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)負極板(ban)層運(yun)用的(de)(de)半(ban)導體，二氧(yang)化錳(meng)有(you)自愈才能。然而，這種(zhong)低(di)阻是有(you)限的(de)(de)，在(zai)低(di)阻抗電(dian)(dian)(dian)(dian)(dian)路的(de)(de)情況下，電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)或(huo)許被浪涌電(dian)(dian)(dian)(dian)(dian)流擊穿。降(jiang)壓(ya)(ya)的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)添加了元件的(de)(de)可靠性。額(e)外電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)運(yun)用上(shang)常見的(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)軌跡(ji)、低(di)阻抗鉭電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)在(zai)電(dian)(dian)(dian)(dian)(dian)路進行(xing)快速(su)充電(dian)(dian)(dian)(dian)(dian)或(huo)放電(dian)(dian)(dian)(dian)(dian)時(shi)，保(bao)(bao)護(hu)電(dian)(dian)(dian)(dian)(dian)阻主(zhu)張為(wei)1Ω/V，假設達(da)不到此(ci)要(yao)求(qiu)應運(yun)用鉭電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)器(qi)降(jiang)壓(ya)(ya)系數高達(da)70%，avx鉭電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)在(zai)這種(zhong)情況下，或(huo)許需求(qiu)更高的(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)比作(zuo)為(wei)一個單一的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)(rong)。

鉭電容的組合應被告用來添加作業電壓的等效電容器。電容在很短的時刻經由最小的串聯電阻的電路國家能接受的最高電壓。浪涌電壓常溫下一個小時時刻內可達到高達10倍額度電壓并高達30秒的時刻。這些都是由幾種不同的機制，包括電阻元件和觸點、粘性實力內介質和生產旁路的缺陷電流途徑。為了表達對他們的這些丟失的影響視為電容的ESR.ESR的頻率依靠性和可利用的關系。　　

信息來(lai)源：avx鉭(tan)電(dian)容(rong)(rong)，貼片鉭(tan)電(dian)容(rong)(rong)，基美貼片鉭(tan)電(dian)容(rong)(rong)，avx貼片鉭(tan)電(dian)容(rong)(rong)，基美鉭(tan)電(dian)容(rong)(rong)